Analytical Model for Broadband Thulium-Bismuth-Doped Fiber Amplifier

被引：13

作者：

Fatehi, Hossein ^{[1
]}

Emami, Siamak Dawazdah ^{[1
]}

Zarifi, Atiyeh ^{[1
]}

Zahedi, Fatemeh Zahra ^{[1
]}

Mirnia, Seyed Edriss ^{[1
]}

Zarei, Arman ^{[1
]}

Ahmad, Harith ^{[2
]}

Harun, Sulaiman Wadi ^{[1
,2
]}

机构：

[1] Univ Malaya, Dept Elect Engn, Fac Engn, Kuala Lumpur 50603, Malaysia

[2] Univ Malaya, Dept Phys, Photon Res Ctr, Kuala Lumpur 50603, Malaysia

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2012年 / 48卷 / 08期

关键词：

2-mu m regions; energy transfer; optical amplifier; Thulium-Bismuth; ENERGY-TRANSFER; LASER;

D O I：

10.1109/JQE.2012.2199739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to the tremendous growth in applications for fiber laser in medical science, sensor solution, and light detection and ranging system at 1.8 to 2-mu m region, more research efforts have been directed toward developing highly efficient broadband fiber amplifiers in this range. In order to amplify this region, Thulium-Bismuth-doped fiber amplifier (TBDFA) is proposed in conjunction with 800-nm pumping. Optimal Thulium ion concentration of 4.17 x 10(26) ion/m(3) and Bismuth ion concentration of 2.08 x 10(26) ion/m(3) together with low phonon energy of germanate glass lead to the highest energy transfer rates. Effective energy transfer mechanism from Bismuth to Thulium in addition to the cross relaxation process between Thulium ions results in higher amplification, efficiency, and super broadband amplification in TBDFA. We analytically solve the rate equations of TBDFA including the effect of energy transfer in order to calculate the broadband amplifier gain.

引用

页码：1052 / 1058

页数：7

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