Fully stoichiometric Cu2BaSn(S1-xSex)4 solar cells via chemical solution deposition

被引：5
|
作者：
Wang, Chen [1 ,2 ,3 ]
Yi, Qinghua [4 ,5 ]
Zhang, Qiang [1 ]
Wang, Fumao [1 ]
Zou, Guifu [2 ,3 ]
机构：
[1] Shandong Univ Sci & Technol, Coll Mech & Elect Engn, Qingdao 266590, Peoples R China
[2] Soochow Univ, Coll Energy, Soochow Inst Energy & Mat Innovat, Suzhou 215000, Peoples R China
[3] Soochow Univ, Key Lab Adv Carbon Mat & Wearable Energy Technol, Suzhou 215000, Peoples R China
[4] Changshu Inst Technol, Coll Phys & Engn, Changshu 215500, Jiangsu, Peoples R China
[5] Jiangsu Lab Adv Funct Mat, Changshu 215500, Jiangsu, Peoples R China
来源：
NANOTECHNOLOGY | 2020年 / 31卷 / 19期
基金：
中国国家自然科学基金;
关键词：
Cu2BaSn(S1-x Se-x)(4); stoichiometry; solution process; tunable bandgap; THIN-FILM; CHALCOGENIDE; EFFICIENT; BANDGAP; LAYER; AG;
D O I：
10.1088/1361-6528/ab70fe
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Cu2BaSn(S1-xSex)(4) has shown great prospects in the photoelectric field due to Earth-abundance, low toxicity, cost efficiency, direct bandgap, high absorption coefficient (> 104 cm(-1)) and reduced anti-site disorder relative to Cu2ZnSn(S1-xSex)(4). A fully-tunable ratio of S/Se is the key to broaden the bandgap of Cu2BaSn(S1-xSex)(4). Here, we introduce a thionothiolic acid metathesis process to readily tune the stoichiometry of Cu2BaSn(S1-xSex)(4) films for the first time. Different stoichiometric Se/(S.+.Se) of Cu2BaSn(S1-xSex)(4) from zero to one can vary the bandgap range from 2 to 1.68 eV. The grain size of Cu2BaSn(S1-xSex)(4) films can be grown more than 10 mu m. The optimized bandgap and high-quality growth of Cu2BaSn(S1-xSex)(4) films ensure the best power conversion efficiency of 2.01% for solution-processed Cu2BaSn(S1-xSex)(4) solar cells. This method provides an alternative solution-processed way for the synthesis of fully stoichiometric Cu2BaSn(S1-xSex)(4).
引用
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页数：9
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