Fabrication and DC Characterizations of AlGaN/GaN High Electron Mobility Transistors (HEMTs) with Fieldplate Over Passivation Layers

被引：1

作者：

Benseddik, N. ^{[1
]}

Benamara, Z. ^{[1
]}

Mazari, H. ^{[1
]}

Ameur, K. ^{[1
]}

Soltani, A. ^{[2
]}

Bluet, J. M. ^{[3
]}

机构：

[1] Univ Djillali Liabes Sidi Bel Abbes, Lab Microelect Appl, Sidi Bel Abbes 22000, Algeria

[2] Univ Lille 1, CNRS, UMR 8516, LASIR, F-59655 Villeneuve Dascq, France

[3] Univ Lyon, INL, CNRSUMR5270, INSA Lyon, F-69621 Villeurbanne, France

来源：

SENSOR LETTERS | 2011年 / 9卷 / 06期

关键词：

HEMT; Passivation; GaN; AlGaN; Fieldplate; PLATE;

D O I：

10.1166/sl.2011.1764

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Metal-organic chemical vapour deposition-grown fieldplated 0.25 mu m gate-length AlGaN/GaN high-electron mobility transistors (HEMTs) with field-plate lengths of 0.5 mu m over dielectric passivation layers have been fabricated on SiC substrates and characterized. These 0.25 mu m gate-length devices exhibited maximum drain current density of more than 1.18 A/mm, peak extrinsic transconductance of 245 mS/mm, a lower gate leakage current density, and a higher breakdown voltage.

引用

页码：2302 / 2304

页数：3

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