Electroluminescence From Two Junction Punch Through Structures in Silicon Nanowires

被引：7

作者：

du Plessis, Monuko ^{[1
]}

Joubert, Trudi-Heleen ^{[1
]}

机构：

[1] Univ Pretoria, Dept Elect Elect & Comp Engn, Carl & Emily Fuchs Inst Microelect, ZA-0002 Pretoria, South Africa

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2015年 / 27卷 / 16期

关键词：

SOI; silicon electroluminescence; nanowire; hot carriers; OPTICAL INTERCONNECT; LIGHT; BREAKDOWN; SI;

D O I：

10.1109/LPT.2015.2438956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot carrier electroluminescence in two junction devices under punch through conditions manufactured in silicon on insulator nanowires are investigated. Of interest is the spectral content of the light emission, as well as the external power efficiency and the light extraction efficiency. An order of magnitude improvement in external power efficiency was achieved relative to a bulk silicon p-n junction in avalanche.

引用

页码：1741 / 1744

页数：4

共 11 条

[1] HOT-CARRIER LUMINESCENCE IN SI [J].

BUDE, J ;

SANO, N ;

YOSHII, A .

PHYSICAL REVIEW B, 1992, 45 (11) :5848-5856

[2] All Si-based optical interconnect for interchip signal transmission [J].

Chatterjee, A ;

Mongkolkachit, P ;

Bhuva, B ;

Verma, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (11) :1663-1665

[3] CMOS-based microdisplay with calibrated backplane [J].

Chen, AR ;

Akinwande, AI ;

Lee, HS .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (12) :2746-2755

[4]

du Plessis M., 2013, U.S. Patent, Patent No. 8362679

[5] Spectral Characteristics of Hot Electron Electroluminescence in Silicon Avalanching Junctions [J].

du Plessis, Monuko ;

Venter, Petrus Johannes ;

Bellotti, Enrico .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2013, 49 (07) :570-577

[6] Analysis of silicon light emission under breakdown condition using an indirect intraband model [J].

El Ghazi, Haddou ;

Jorio, Anouar ;

Zorkani, Izeddine .

OPTICS COMMUNICATIONS, 2008, 281 (12) :3320-3323

[7] Fabrication of planar silicon nanowires on silicon-on-insulator using stress limited oxidation [J].

Kedzierski, J ;

Bokor, J ;

Kisielowski, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2825-2828

[8] VISIBLE LIGHT FROM A SILICON P-N JUNCTION [J].

NEWMAN, R .

PHYSICAL REVIEW, 1955, 100 (02) :700-703

[9] Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications [J].

Rebohle, L ;

Gebel, T ;

Yankov, RA ;

Trautmann, T ;

Skorupa, W ;

Sun, J ;

Gauglitz, G ;

Frank, R .

OPTICAL MATERIALS, 2005, 27 (05) :1055-1058

[10] Electro-luminescence from ultra-thin silicon [J].

Saito, Shin-ichi ;

Hisamoto, Digh ;

Shimizu, Haruka ;

Hamamura, Hirotaka ;

Tsuchiya, Ryuta ;

Matsui, Yuichi ;

Mine, Toshiyuki ;

Arai, Tadashi ;

Sugii, Nobuyuki ;

Torii, Kazuyoshi ;

Kimura, Shin'ichiro ;

Onai, Takahiro .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28) :L679-L682

← 1 2 →