Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy

被引：4

作者：

Kumar, Mahesh ^{[1
]}

Roul, Basanta ^{[1
,2
]}

Bhat, Thirumaleshwara N. ^{[1
]}

Rajpalke, Mohana K. ^{[1
]}

Kalghatgi, A. T. ^{[2
]}

Krupanidhi, S. B. ^{[1
]}

机构：

[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

[2] Bharat Elect, Cent Res Lab, Bangalore 560013, Karnataka, India

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

关键词：

PHOTOEMISSION; INN; GAN; HETEROJUNCTIONS; EDGE; ALN;

D O I：

10.1143/JJAP.51.020203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In0.2Ga0.8N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In0.2Ga0.8N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08 +/- 0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found similar to 0.74 eV and a type-II heterojunction. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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