Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy

被引：4
|
作者：
Kumar, Mahesh [1 ]
Roul, Basanta [1 ,2 ]
Bhat, Thirumaleshwara N. [1 ]
Rajpalke, Mohana K. [1 ]
Kalghatgi, A. T. [2 ]
Krupanidhi, S. B. [1 ]
机构：
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
[2] Bharat Elect, Cent Res Lab, Bangalore 560013, Karnataka, India
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期
关键词：
PHOTOEMISSION; INN; GAN; HETEROJUNCTIONS; EDGE; ALN;
D O I：
10.1143/JJAP.51.020203
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In0.2Ga0.8N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In0.2Ga0.8N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08 +/- 0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found similar to 0.74 eV and a type-II heterojunction. (C) 2012 The Japan Society of Applied Physics
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页数：3
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