Observation of antiphase domains in CdxHg1-xTe films on silicon by the phase contrast method in atomic force microscopy

被引：4

作者：

Sabinina, IV ^{[1
]}

Gutakovskii, AK

Sidorov, YG

Yakushev, MV

Varavin, VS

Latyshev, AV

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2005年 / 82卷 / 05期

关键词：

D O I：

10.1134/1.2130915

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It has been shown that phase contrast in atomic force microscopy (AFM) can be used to obtain adequate information on the density and distribution of antiphase domains on the surface of CdHgTe films grown by molecular beam epitaxy on a Si(301) substrate. By comparing the AFM phase images of the film surface with TEM images of structural defects in the near-surface region, the relation between microstructure and micromorphology of the films is revealed. (C) 2005 Pleiades Publishing, Inc.

引用

页码：292 / 296

页数：5

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