Self-aligned fabrication of in-plane SiGe nanowires on rib-patterned Si (001) substrates

被引：11

作者：

Chen, G. ^{[1
]}

Springholz, G. ^{[1
]}

Jantsch, W. ^{[1
]}

Schaeffler, F. ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 04期

关键词：

SHAPE TRANSITION; QUANTUM DOTS; ISLANDS; SI(001); GROWTH; GE; PYRAMIDS; EPITAXY; DOMES;

D O I：

10.1063/1.3608149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiGe heteroepitaxy on Si (001) substrates induces three-dimensional Stranski-Krastanow growth. In this work, in-plane nanowires were produced during the growth of Si0.8Ge0.2 onto rib-patterned Si (001) templates oriented in [010] direction. Atomic force microscopy reveals initially hut-shaped SiGe islands on the upper (001) area of the ribs form extended nanowires with lengths of up to 10 mu m via coalescence and self-alignment to the rib direction. Finite element simulations show that these phenomena can be attributed to the minimization of the surface and strain energy density. This method provides a route towards devices based on in-plane SiGe nanowires. (C) 2011 American Institute of Physics. [doi:10.1063/1.3608149]

引用

页数：3