Self-aligned fabrication of in-plane SiGe nanowires on rib-patterned Si (001) substrates

被引：11
|
作者：
Chen, G. [1 ]
Springholz, G. [1 ]
Jantsch, W. [1 ]
Schaeffler, F. [1 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 04期
关键词：
SHAPE TRANSITION; QUANTUM DOTS; ISLANDS; SI(001); GROWTH; GE; PYRAMIDS; EPITAXY; DOMES;
D O I：
10.1063/1.3608149
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SiGe heteroepitaxy on Si (001) substrates induces three-dimensional Stranski-Krastanow growth. In this work, in-plane nanowires were produced during the growth of Si0.8Ge0.2 onto rib-patterned Si (001) templates oriented in [010] direction. Atomic force microscopy reveals initially hut-shaped SiGe islands on the upper (001) area of the ribs form extended nanowires with lengths of up to 10 mu m via coalescence and self-alignment to the rib direction. Finite element simulations show that these phenomena can be attributed to the minimization of the surface and strain energy density. This method provides a route towards devices based on in-plane SiGe nanowires. (C) 2011 American Institute of Physics. [doi:10.1063/1.3608149]
引用
收藏
页数：3
相关论文
共 21 条
  • [1] Self-assembled in-plane Ge nanowires on rib-patterned Si (1110) templates
    Du, Lei
    Scopece, Daniele
    Springholz, Gunther
    Schaeffler, Friedrich
    Chen, Gang
    PHYSICAL REVIEW B, 2014, 90 (07)
  • [2] Compositional evolution of SiGe islands on patterned Si (001) substrates
    Zhang, Jianjun
    Rastelli, Armando
    Schmidt, Oliver G.
    Bauer, Guenther
    APPLIED PHYSICS LETTERS, 2010, 97 (20)
  • [3] In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2substrates
    Lange, Felix
    Ernst, Owen
    Teubner, Thomas
    Richter, Carsten
    Schmidbauer, Martin
    Skibitzki, Oliver
    Schroeder, Thomas
    Schmidt, Peer
    Boeck, Torsten
    NANO FUTURES, 2020, 4 (03) : 1 - 8
  • [4] Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1110) Substrate
    Du, Lei
    Chen, Gang
    Lu, Wei
    NANOSCALE RESEARCH LETTERS, 2017, 12
  • [5] Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates
    Isa, F.
    Pezzoli, F.
    Isella, G.
    Meduna, M.
    Falub, C. V.
    Mueller, E.
    Kreiliger, T.
    Taboada, A. G.
    von Kaenel, H.
    Miglio, Leo
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (10)
  • [6] Fabrication and Characteristics of Self-Aligned ZnO Nanotube and Nanorod Arrays on Si Substrates by Atomic Layer Deposition
    Chang, Yung-Huang
    Wang, Shun-Min
    Liu, Chien-Min
    Chen, Chih
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (11) : K236 - K241
  • [7] Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates
    Hackl, Florian
    Grydlik, Martyna
    Brehm, Moritz
    Groiss, Heiko
    Schaeffler, Friedrich
    Fromherz, Thomas
    Bauer, Guenther
    NANOTECHNOLOGY, 2011, 22 (16)
  • [8] Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates
    Grydlik, Martyna
    Langer, Gregor
    Fromherz, Thomas
    Schaeffler, Friedrich
    Brehm, Moritz
    NANOTECHNOLOGY, 2013, 24 (10)
  • [9] The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography
    Chen, Peixuan
    Fan, Yongliang
    Zhong, Zhenyang
    NANOTECHNOLOGY, 2009, 20 (09)
  • [10] Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays
    Bergamaschini, R.
    Isa, F.
    Falub, C. V.
    Niedermann, P.
    Mueller, E.
    Isella, G.
    von Kaenel, H.
    Miglio, L.
    SURFACE SCIENCE REPORTS, 2013, 68 (3-4) : 390 - 417
123