Effect of biaxial strain on the band gap of wurtzite AlxGa1-xN

被引：3

作者：

Liou, Bo-Ting ^{[1
]}

Kuo, Yen-Kuang ^{[2
]}

机构：

[1] Hsiuping Univ Sci & Technol, Dept Mech Engn, Taichung 41280, Taiwan

[2] Natl Changhua Univ Educ, Dept Phys, Changhua 50058, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 106卷 / 04期

关键词：

LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; TEMPERATURE; DEPENDENCE; STRESS; AL(X)GA1-XN; FILMS;

D O I：

10.1007/s00339-012-6772-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

First-principles calculations are applied to investigate the effect of biaxial strain on the band gap of wurtzite AlxGa1-xN. The band gap and band gap bowing parameter increase with compressive strain and decrease with tensile strain. The strain-induced changes in the band gap of AlxGa1-xN are linear in the strain range of about -1% to 1% while the linearity is invalid out of the range. The linear coefficient B(x), characterizing the relationship between the band gap and the biaxial stress, with a quadratic form is obtained. The value of the band gap bowing parameter decreases from 1.0 eV for -2% strain to 0.91 eV for unstrained and to 0.67 eV for 2% strain.

引用

页码：1013 / 1016

页数：4

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