Effect of biaxial strain on the band gap of wurtzite AlxGa1-xN

被引:3
|
作者
Liou, Bo-Ting [1 ]
Kuo, Yen-Kuang [2 ]
机构
[1] Hsiuping Univ Sci & Technol, Dept Mech Engn, Taichung 41280, Taiwan
[2] Natl Changhua Univ Educ, Dept Phys, Changhua 50058, Peoples R China
来源
关键词
LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; TEMPERATURE; DEPENDENCE; STRESS; AL(X)GA1-XN; FILMS;
D O I
10.1007/s00339-012-6772-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First-principles calculations are applied to investigate the effect of biaxial strain on the band gap of wurtzite AlxGa1-xN. The band gap and band gap bowing parameter increase with compressive strain and decrease with tensile strain. The strain-induced changes in the band gap of AlxGa1-xN are linear in the strain range of about -1% to 1% while the linearity is invalid out of the range. The linear coefficient B(x), characterizing the relationship between the band gap and the biaxial stress, with a quadratic form is obtained. The value of the band gap bowing parameter decreases from 1.0 eV for -2% strain to 0.91 eV for unstrained and to 0.67 eV for 2% strain.
引用
收藏
页码:1013 / 1016
页数:4
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