MSM-photodetectors with corrugated metal-semiconductor interface based on III-V semiconductors

The results of investigation for two types of GaAs(InP) based MSM photodetectors are described: 1) on quasiperiodical surfaces as light radiation detectors with enhanced photosensitivity throughout the spectral sensitivity range of device; 2) on holographic gratings as detectors having selective sensitivity respect to wavelength, polarization and incidence angle of light. The electrophysical parameters of Au(Ag)-GaAs(InP) MSM-photodetectors - current transport mechanism, interface recombination velocity, minority carrier diffusion length etc.- the spectral, angular, and polarization characteristics of their photosensitivity have been determined. Surface plasmon polariton excitation is shown to be an additional mechanism of photosensitivity enhancement for MSM photodetectors with corrugated surface. The passivation of corrugated surfaces in aqueous solution of sulfides was used for further improvement of photodetector sensitivity. The optimum regimes of chemical processing of texturation and passivation have been determined.