Solvo-Thermal Synthesis and Characterization of Indium Selenide Nanocrystals

被引：8

作者：

Hsiang, Hsing-I ^{[1
]}

Lu, Li-Hsin ^{[1
]}

Chang, Yu-Lun ^{[1
]}

Ray, Dahtong ^{[1
]}

Yen, Fu-Su ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Resources Engn, Particulate Mat Res Ctr, Tainan 70101, Taiwan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2011年 / 94卷 / 11期

关键词：

IN2SE3; THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION; SINGLE-SOURCE PRECURSOR; CUINSE2; NANOWIRES; PHASE; GROWTH; TRANSFORMATION; MOCVD;

D O I：

10.1111/j.1551-2916.2011.04668.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zinc-blende-type cubic InSe and beta-In(2)Se(3) crystallites were synthesized using the solvo-thermal method in this study. The crystalline structure, electronic and optical characterization of indium selenide particles were investigated using transmission electron microscopy (TEM), X-ray diffractometer (XRD), UV-visible absorbance spectra. It was observed that the dominant crystalline structure of samples synthesized at 180 degrees C for 1.5-48 h is zinc-blende-type cubic InSe phase with lattice parameter of about 0.573 nm. As the reaction temperature was raised to 200 degrees C, the zinc-blende-type cubic InSe phase diminished and the beta-In(2)Se(3) phase was produced. The zinc-blende-type cubic InSe phase band gap is about 1.68 eV. These synthesized compounds provide promising candidates for solar cell applications.

引用

页码：3757 / 3760

页数：4

共 21 条

[1] Study of a growth instability of γ-In2Se3 [J].