Numerical microwave plasma discharge study for the growth of large single-crystal diamond

被引：19

作者：

Yamada, Hideaki ^{[1
]}

Chayahara, Akiyoshi ^{[1
]}

Mokuno, Yoshiaki ^{[1
]}

Shikata, Shinichi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan

来源：

关键词：

Microwave plasma CVD; Diamond; Simulation; CHEMICAL-VAPOR-DEPOSITION; GAS-PHASE; FABRICATION; FILMS;

D O I：

10.1016/j.diamond.2014.11.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A microwave plasma discharge simulation was conducted to determine the spatial concentrations of hydrocarbon radicals and their uniformity over areas over 25 mm(2). Dependences of these on controllable growth parameters were also determined. Parameters included the absorbed microwave power, the methane concentration in the feed gas mixture and the gas pressure. The radical concentrations that were obtained using simplified chemistry for the source gas species are consistent with those specified in other reports. The radical concentrations were consistent with the experimental growth rates but not with their distributions. This suggests the importance of substrate temperature uniformity and a contribution from CHx(x <3) in addition to CH3. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：9 / 14

页数：6

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