Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

被引：32
|
作者：
Jiang, Jie [1 ,2 ]
Sun, Jia [3 ]
Dou, Wei [3 ]
Wan, Qing [3 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[2] Hunan Univ, Key Lab Micronano Optoelect Devices, Minist Educ, Changsha 410082, Hunan, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Electric double layer (EDL); flexible paper electronics; junctionless thin-film transistors (TFTs);
D O I：
10.1109/LED.2011.2172973
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Junctionless flexible oxide-based electric-double-layer thin-film transistors (TFTs) are fabricated on paper substrates at room temperature. Channel and source/drain electrodes are realized by an indium-tin-oxide (ITO) film without any source/drain junction. Effective field-effect modulation of drain current can be obtained when the thickness of the top ITO film is decreased to 20 nm. These junctionless paper TFTs show a good device performance with a small subthreshold swing of 0.21 V/dec and a large on/off ratio of 2 x 10(6). Such junctionless paper TFTs can provide a new opportunity for flexible paper electronics and low-cost portable-sensor applications.
引用
收藏
页码：65 / 67
页数：3
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