Laser-induced fluorescence of fused silica irradiated by ArF excimer laser

被引:13
|
作者
Zhang, Haibo [1 ,2 ]
Yuan, Zhijun [1 ]
Zhou, Jun [1 ]
Dong, Jingxing [1 ]
Wei, Yunrong [1 ]
Lou, Qihong [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai Key Lab All Solid State Laser & Appl Tec, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
关键词
HIGH-PURITY SILICA; DEFECT FORMATION; FRACTOLUMINESCENCE SPECTRA; DAMAGE GROWTH; SIO2; GLASS; F-2; LASER; ULTRAVIOLET; LUMINESCENCE; ABSORPTION; DEPENDENCE;
D O I
10.1063/1.3608163
中图分类号
O59 [应用物理学];
学科分类号
摘要
Laser-induced fluorescence (LIF) of high-purity fused silica irradiated by ArF excimer laser is studied experimentally. LIF bands of the fused silica centered at 281 nm, 478 nm, and 650 nm are observed simultaneously. Furthermore, the angular distribution of the three fluorescence peaks is examined. Microscopic image of the laser modified fused silica indicates that scattering of the generated fluorescence by laser-induced damage sites is the main reason for the angular distribution of LIF signals. Finally, the dependence of LIF signals intensities of the fused silica on laser power densities is presented. LIF signals show a squared power density dependence, which indicates that laser-induced defects are formed mainly via two-photon absorption processes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3608163]
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页数:5
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