Cubic AgPbmSbTe2+m:: Bulk thermoelectric materials with high figure of merit

被引:2707
作者
Hsu, KF
Loo, S
Guo, F
Chen, W
Dyck, JS
Uher, C
Hogan, T
Polychroniadis, EK
Kanatzidis, MG [1 ]
机构
[1] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA
[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[3] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece
关键词
D O I
10.1126/science.1092963
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPbm SbTe2+m may be suitable for this purpose. With m=10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZT(max) of similar to2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPbm SbTe2+m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.
引用
收藏
页码:818 / 821
页数:4
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