Poly(2-vinylnaphthalene)-block-poly(acrylic acid) Block Copolymer: Self-Assembled Pattern Formation, Alignment, and Transfer into Silicon via Plasma Etching

被引:7
|
作者
Zhang, Xin [1 ]
Metting, Christopher J. [1 ]
Briber, Robert M. [1 ]
Weilnboeck, Florian [1 ]
Shin, Sang Hak [1 ]
Jones, Benjamin G. [1 ]
Oehrlein, Gottlieb S. [1 ]
机构
[1] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
关键词
block copolymers; poly(2-vinylnaphthalene)-block-poly(acrylic acid); reactive-ion etching; self-assembly; solvent vapor exposure; ELECTRIC-FIELD;
D O I
10.1002/macp.201100232
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
P2VN-b-PAA is a novel diblock copolymer which has potential as a self-assembled nanoscale patterning material. Thin spin cast P2VN-b-PAA films rapidly reorganize to vertical lamellar with exposure to acetone vapor. P2VN-b-PAA lamellar morphology was aligned by electric field under acetone vapor at a significantly faster rate and at lower electric field strengths than other polymer systems. Observed dry etching selectivity for P2VN to PAA were comparatively high for a variety of etch gases, consistent with estimations from Ohnishi and ring parameters. Block copolymer self assembled patterns were transferred to silicon via two-step CF4 and SF6 etching.
引用
收藏
页码:1735 / 1741
页数:7
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