Poly(2-vinylnaphthalene)-block-poly(acrylic acid) Block Copolymer: Self-Assembled Pattern Formation, Alignment, and Transfer into Silicon via Plasma Etching

被引：7

作者：

Zhang, Xin ^{[1
]}

Metting, Christopher J. ^{[1
]}

Briber, Robert M. ^{[1
]}

Weilnboeck, Florian ^{[1
]}

Shin, Sang Hak ^{[1
]}

Jones, Benjamin G. ^{[1
]}

Oehrlein, Gottlieb S. ^{[1
]}

机构：

[1] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA

来源：

MACROMOLECULAR CHEMISTRY AND PHYSICS | 2011年 / 212卷 / 16期

关键词：

block copolymers; poly(2-vinylnaphthalene)-block-poly(acrylic acid); reactive-ion etching; self-assembly; solvent vapor exposure; ELECTRIC-FIELD;

D O I：

10.1002/macp.201100232

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

P2VN-b-PAA is a novel diblock copolymer which has potential as a self-assembled nanoscale patterning material. Thin spin cast P2VN-b-PAA films rapidly reorganize to vertical lamellar with exposure to acetone vapor. P2VN-b-PAA lamellar morphology was aligned by electric field under acetone vapor at a significantly faster rate and at lower electric field strengths than other polymer systems. Observed dry etching selectivity for P2VN to PAA were comparatively high for a variety of etch gases, consistent with estimations from Ohnishi and ring parameters. Block copolymer self assembled patterns were transferred to silicon via two-step CF4 and SF6 etching.

引用

页码：1735 / 1741

页数：7

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