Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

被引：16
作者：
Chiang, TK [1 ]
Wang, YH [1 ]
Houng, MP [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 01期
关键词：
D O I：
10.1016/S0038-1101(98)00240-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Short-channel effects on the subthreshold behavior are modeled for fully depicted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 mu m. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：123 / 129
页数：7
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