Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

被引：0

作者：

Benoit, Robert R. ^{[1
]}

Cheng, Christopher Y. ^{[2
]}

Rudy, Ryan Q. ^{[1
]}

Polcawich, Ronald G. ^{[1
]}

Pulskamp, Jeffrey S. ^{[1
]}

Potrepka, Daniel M. ^{[1
]}

Hanrahan, Brendan M. ^{[1
]}

Trolier-McKinstry, Susan ^{[2
,3
]}

机构：

[1] US Army, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

[2] Penn State Univ, Mat Res Inst, State Coll, PA USA

[3] Penn State Univ, Mat Sci Eng Dept, State Coll, PA USA

来源：

2018 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2018年

关键词：

Lead Zirconate Titanate; PZT; Silicon-on-Sapphire; MEMS; PZT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sputtered Pb(Zr52Ti48)O-3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in P-MAX (46.2 vs. 42.1 mu V/cm(2)) and PREM (22.0 vs. 16.5 mu V/cm(2)) over films deposited on Si. A decrease in maximum epsilon r from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangent are studied using fabricated capacitor structures.

引用

页数：3

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