Terahertz radiation due to random grating coupled surface plasmon polaritons

被引:16
作者
Shubina, T. V. [1 ]
Gippius, N. A. [2 ,3 ]
Shalygin, V. A. [4 ]
Andrianov, A. V. [1 ]
Ivanov, S. V. [1 ]
机构
[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Univ Blaise Pascal, LASMEA, UMR 6602, FR-63177 Aubiere, France
[3] RAS, Gen Phys Inst, Moscow 119991, Russia
[4] St Petersburg State Polytech Univ, St Petersburg 195251, Russia
关键词
THIN; EXCITATION; SEMICONDUCTORS; SCATTERING; DEPLETION; ELECTRONS; EMISSION;
D O I
10.1103/PhysRevB.83.165312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of surface plasmon polaritons, supported by the accumulation layer, to the THz emission. The principal emission band occupies the spectral range of 2-6 THz. We establish a link between the shape of emission spectra and the structural factor of the random grating and show that the change of slope of power dependencies is characteristic for temperature-dependent plasmonic mechanisms. The super-linear rise of a THz emission intensity on applied electric power provides the advantage of such materials in emission yield.
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页数:5
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