X-ray photoelectron spectroscopy and electron spin resonance studies on O-2 and N2O plasma oxidation of silicon

被引：2
作者：
Masuda, A
Yonezawa, Y
Morimoto, A
Kumeda, M
Shimizu, T
机构：
[1] KANAZAWA UNIV,FAC ENGN,DEPT ELECT & COMP ENGN,KANAZAWA,ISHIKAWA 920,JAPAN
[2] IND RES INST ISHIKAWA PREFECTURE,KANAZAWA,ISHIKAWA 92002,JAPAN
[3] KANAZAWA UNIV,FAC ENGN,LAB DEV ENGN MAT,KANAZAWA,ISHIKAWA 920,JAPAN
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 39卷 / 03期
关键词：
plasma oxidation; silicon; electron spin resonance; X-ray photoelectron spectroscopy;
D O I：
10.1016/0921-5107(96)01574-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
O-2 and N2O plasma oxidation of(lll) and (100)Si on the anode is investigated in detail mainly using X-ray photoelectron spectroscopy (XPS) and electron spin resonance (ESR). The oxide growth rate estimated using ellipsometry is discussed. ESR observation reveals that at the SiO2-(111)Si interface formed by plasma oxidation there are Si dangling bonds similar to those in amorphous Si in addition to P-b centres. The P-b centre density at the SiO2-(111)Si interface formed by N2O plasma oxidation is comparable with that formed by thermal oxidation. It is also suggested that the oxide growth mode on Si in the initial stage is two-dimensional growth.
引用
收藏
页码：173 / 178
页数：6
相关论文
共 20 条
  • [1] EFFECTS OF OXIDATION CONDITIONS ON THE FORMATION OF PARAMAGNETIC CENTERS AT AND NEAR THE SI/SIO2 INTERFACE
    AWAZU, K
    KAWAZOE, H
    ANDO, T
    WATANABE, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) : 2979 - 2985
  • [2] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS
    CAPLAN, PJ
    POINDEXTER, EH
    DEAL, BE
    RAZOUK, RR
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854
  • [3] CHARACTERIZATION OF ULTRATHIN DIELECTRICS GROWN BY MICROWAVE AFTERGLOW OXYGEN AND N2O PLASMA
    CHEN, PC
    HSU, KYJ
    LIN, JY
    HWANG, HL
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B): : 973 - 977
  • [4] FUNDAMENTAL ELECTRICAL-PROPERTIES OF FLUORINATED AND N2O PLASMA-ANNEALED ULTRATHIN SILICON-OXIDES GROWN BY MICROWAVE PLASMA AFTERGLOW OXIDATION AT LOW-TEMPERATURES
    CHEN, PC
    HSU, KYJ
    HWANG, HL
    LIN, JL
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) : 5508 - 5514
  • [5] MODEL FOR DIELECTRIC GROWTH ON SILICON IN A NITROUS-OXIDE ENVIRONMENT
    DIMITRIJEV, S
    SWEATMAN, D
    HARRISON, HB
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (13) : 1539 - 1540
  • [6] HIGHLY RELIABLE THIN NITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT
    FUKUDA, H
    ARAKAWA, T
    OHNO, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2333 - L2336
  • [7] HO VQ, 1981, IEEE T ELECTRON DEV, V28, P1060, DOI 10.1109/T-ED.1981.20485
  • [8] ELECTRICAL CHARACTERISTICS OF ULTRATHIN OXYNITRIDE GATE DIELECTRIC PREPARED BY RAPID THERMAL-OXIDATION OF SI IN N2O
    HWANG, HS
    TING, WC
    MAITI, B
    KWONG, DL
    LEE, J
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1010 - 1011
  • [9] SI-SIO2 INTERFACE CHARACTERIZATION BY ESCA
    ISHIZAKA, A
    IWATA, S
    KAMIGAKI, Y
    [J]. SURFACE SCIENCE, 1979, 84 (02) : 355 - 374
  • [10] NITROGEN AND OXYGEN INCORPORATION DURING RAPID THERMAL-PROCESSING OF SI IN N2O
    KUIPER, AET
    POMP, HG
    ASVELD, PM
    BIK, WA
    HABRAKEN, FHPM
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (09) : 1031 - 1033
12