Atomically thin quantum light-emitting diodes

被引：276

作者：

Palacios-Berraquero, Carmen ^{[1
]}

Barbone, Matteo ^{[2
]}

Kara, Dhiren M. ^{[1
]}

Chen, Xiaolong ^{[2
]}

Goykhman, Ilya ^{[2
]}

Yoon, Duhee ^{[2
]}

Ott, Anna K. ^{[2
]}

Beitner, Jan ^{[1
]}

Watanabe, Kenji ^{[3
]}

Taniguchi, Takashi ^{[3
]}

Ferrari, Andrea C. ^{[2
]}

Atature, Mete ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England

[2] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England

[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050034, Japan

来源：

NATURE COMMUNICATIONS | 2016年 / 7卷

基金：

英国工程与自然科学研究理事会;

关键词：

GRAPHENE; EMISSION; EMITTERS;

D O I：

10.1038/ncomms12978

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

引用

页数：6

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