Engineering conduction and valence band states in site-controlled pyramidal quantum dots

被引：7

作者：

Mohan, A. ^{[1
]}

Gallo, P. ^{[1
]}

Felici, M. ^{[1
]}

Dwir, B. ^{[1
]}

Rudra, A. ^{[1
]}

Faist, J. ^{[2
]}

Kapon, E. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland

[2] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期

关键词：

FINE-STRUCTURE; CONFINEMENT; ABSORPTION; EMISSION; WIRES;

D O I：

10.1063/1.3601916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

of site-controlled InGaAs/GaAs quantum dots (QDs) grown into pyramidal recesses, by controlling their shape, size, and composition. QDs with CB level separation ranging from similar to 15 to 70 meV are obtained, useful in applications based on intraband transitions, e. g., QD photodetectors and QD cascade lasers. Moreover, by varying the aspect ratio and composition of the QDs we are able to switch the polarization of the dominant interband transition, a feature of interest for producing single photon emitters and QD amplifiers with prescribed polarization states (c) 2011 American Institute of Physics. [doi:10.1063/1.3601916]

引用

页数：3

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