InP Lateral Overgrowth Technology for Silicon Photonics

被引：0

作者：

Wang, Zhechao ^{[1
]}

Junesand, Carl ^{[1
]}

Metaferia, Wondwosen ^{[1
]}

Hu, Chen ^{[1
]}

Lourdudoss, Sebastian ^{[1
]}

Wosinski, Lech ^{[1
]}

机构：

[1] Royal Inst Technol Sweden, Sch ICT, S-16440 Kista, Sweden

来源：

OPTOELECTRONIC MATERIALS AND DEVICES V | 2011年 / 7987卷

关键词：

epitaxial lateral overgrowth; silicon photonics; integrated optics materials; semiconducting III-V materials; hydride vapour phase epitaxy; ULTRA-SMALL; LASER; GAIN; SI; GE;

D O I：

10.1117/12.887973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon. (C) 2010 Optical Society of America [OCIS codes: 130.3130, 130.5990]

引用

页数：6

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