Impacts of NH3 plasma treatment on double-gated poly-Si nanowire thin-film transistors

被引：2
|
作者：
Lee, K. H. [1 ]
Lin, H. C. [1 ]
Hsu, H. H. [1 ]
Huang, T. Y. [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/EDSSC.2007.4450078
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
NH3 plasma treatment has been employed to improve the performance of a novel double-gated poly-Si nanowire thin-film transistor in terms of increased on-state current, reduced off-state current, and steeper sub-threshold slope. An interesting finding is that the radiation damage, accompanying by a negative shift in threshold voltage, appears to occur in the early stage of plasma treatment for devices with top poly-gate. Such effect disappears when an Al top-gate is used instead.
引用
收藏
页码：125 / 128
页数：4
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