Impacts of NH3 plasma treatment on double-gated poly-Si nanowire thin-film transistors

被引：2

作者：

Lee, K. H. ^{[1
]}

Lin, H. C. ^{[1
]}

Hsu, H. H. ^{[1
]}

Huang, T. Y. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS | 2007年

关键词：

D O I：

10.1109/EDSSC.2007.4450078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NH3 plasma treatment has been employed to improve the performance of a novel double-gated poly-Si nanowire thin-film transistor in terms of increased on-state current, reduced off-state current, and steeper sub-threshold slope. An interesting finding is that the radiation damage, accompanying by a negative shift in threshold voltage, appears to occur in the early stage of plasma treatment for devices with top poly-gate. Such effect disappears when an Al top-gate is used instead.

引用

页码：125 / 128

页数：4

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