High Power and high efficiency mid-infrared type-II quantum well and interband cascade lasers

被引：1
|
作者：
Pei, SS [1 ]
Lin, CH [1 ]
Yang, BH [1 ]
Lee, HQ [1 ]
Yang, RQ [1 ]
Zhang, D [1 ]
Murry, SJ [1 ]
Zheng, J [1 ]
机构：
[1] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA
来源：
OPTOELECTRONIC MATERIALS AND DEVICES | 1998年 / 3419卷
关键词：
semiconductor laser; mid-infrared source; type-II quantum well; broken-gap band alignment; antimonide;
D O I：
10.1117/12.311018
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
High power and high quantum efficiency operation of both diode-pumped and interband cascade lasers based on InAs/Ga(In)Sb type-II quantum well with a broken gap band alignment have been demonstrated. The interband cascade laser yielded 0.5 W peak and 16 mW average output per facet under 1- and 5-mu s long pulses at 80K, while the optically pumped 4-mu m devices yielded 0.9-1.6 W peak and 90-150 mW average output per facet for 0.1- to 1-ms long pulses at 71K. These output powers are among the highest long-pulse results reported from any semiconductor laser at these wavelengths.
引用
收藏
页码：273 / 283
页数：11
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