High Power and high efficiency mid-infrared type-II quantum well and interband cascade lasers

被引：1

作者：

Pei, SS ^{[1
]}

Lin, CH ^{[1
]}

Yang, BH ^{[1
]}

Lee, HQ ^{[1
]}

Yang, RQ ^{[1
]}

Zhang, D ^{[1
]}

Murry, SJ ^{[1
]}

Zheng, J ^{[1
]}

机构：

[1] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

来源：

OPTOELECTRONIC MATERIALS AND DEVICES | 1998年 / 3419卷

关键词：

semiconductor laser; mid-infrared source; type-II quantum well; broken-gap band alignment; antimonide;

D O I：

10.1117/12.311018

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High power and high quantum efficiency operation of both diode-pumped and interband cascade lasers based on InAs/Ga(In)Sb type-II quantum well with a broken gap band alignment have been demonstrated. The interband cascade laser yielded 0.5 W peak and 16 mW average output per facet under 1- and 5-mu s long pulses at 80K, while the optically pumped 4-mu m devices yielded 0.9-1.6 W peak and 90-150 mW average output per facet for 0.1- to 1-ms long pulses at 71K. These output powers are among the highest long-pulse results reported from any semiconductor laser at these wavelengths.

引用

页码：273 / 283

页数：11