Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures

被引：0

作者：

Si, JJ ^{[1
]}

Yang, QQ ^{[1
]}

Wang, HJ ^{[1
]}

Wang, QM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

INTEGRATED OPTOELECTRONICS II | 1998年 / 3551卷

关键词：

Si/SiGe; quantum dot; electroluminescence; photoluminescence;

D O I：

10.1117/12.317998

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are platelike. And it showed that the diameters of QDs are in range from 40nm to 140nm with the most in 120nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T=14K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half-maximum (FWHM) is about 97meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed.

引用

页码：49 / 52

页数：4

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