The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon

被引：10
|
作者：
Huang, YL
Ma, Y
Job, R
Fahrner, WR
Simoen, E
Claeys, C
机构：
[1] Fern Univ Hagen, Chair Elect Devices, D-58084 Hagen, Germany
[2] IMEC, B-3001 Louvain, Belgium
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 03期
关键词：
D O I：
10.1063/1.1999035
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogen-enhanced thermal donor formation is achieved in p-type Czochralski silicon after exposure to hydrogen plasma and posthydrogenation annealing. Hydrogen diffusivities for the temperatures between 350 and 450 degrees C are determined based on spreading resistance probe measurement. The hydrogen diffusion is found to be trap limited. Two relationships (for different temperature ranges) are established to describe the lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in silicon. The result reveals that hydrogen atoms both in free and in trapped states can enhance the oxygen diffusion. (c) 2005 American Institute of Physics.
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页数：4
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