Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode

被引：13
作者：
Borisov, B [1 ]
Nikishin, S [1 ]
Kuryatkov, V [1 ]
Temkin, H [1 ]
机构：
[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 19期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2128485
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a significant improvement in the room temperature cathodoluminescence efficiency of AlGaN quantum wells when the three-dimensional growth mode is induced by reduced flux of ammonia. We interpret this observation in terms of formation of quantum dots of AlGaN in Al0.45Ga0.55N wells. Reflection high electron diffraction images and detailed measurements of the cathodoluminescence intensity, linewidth, and wavelength as a function of growth conditions are consistent with the presence of quantum dots. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
相关论文
共 23 条
  • [1] High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
    Adivarahan, V
    Wu, S
    Zhang, JP
    Chitnis, A
    Shatalov, M
    Mandavilli, V
    Gaska, R
    Khan, MA
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (23) : 4762 - 4764
  • [2] AlGaN single-quantum-well light-emitting diodes with emission at 285 nm
    Adivarahan, V
    Wu, S
    Chitnis, A
    Pachipulusu, R
    Mandavilli, V
    Shatalov, M
    Zhang, JP
    Khan, MA
    Tamulaitis, G
    Sereika, A
    Yilmaz, I
    Shur, MS
    Gaska, R
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3666 - 3668
  • [3] BORISOV B, UNPUB
  • [4] Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
    Daudin, B
    Widmann, F
    Feuillet, G
    Samson, Y
    Arlery, M
    Rouviere, JL
    [J]. PHYSICAL REVIEW B, 1997, 56 (12) : R7069 - R7072
  • [5] Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
    Fischer, AJ
    Allerman, AA
    Crawford, MH
    Bogart, KHA
    Lee, SR
    Kaplar, RJ
    Chow, WW
    Kurtz, SR
    Fullmer, KW
    Figiel, JJ
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (17) : 3394 - 3396
  • [6] 292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base
    Hanlon, A
    Pattison, PM
    Kaeding, JF
    Sharma, R
    Fini, P
    Nakamura, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (6B): : L628 - L630
  • [7] HIRAYAMA H, 1999, MRS INTERNET J NITRI, V4
  • [8] HUANG D, 2004, OPTOELECTRONIC PROPE
  • [9] AlN/AlGaInN superlattice light-emitting diodes at 280 nm
    Kipshidze, G
    Kuryatkov, V
    Zhu, K
    Borisov, B
    Holtz, M
    Nikishin, S
    Temkin, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) : 1363 - 1366
  • [10] Kipshidze G, 2002, PHYS STATUS SOLIDI A, V192, P286, DOI 10.1002/1521-396X(200208)192:2<286::AID-PSSA286>3.0.CO
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