Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode

被引：13

作者：

Borisov, B ^{[1
]}

Nikishin, S ^{[1
]}

Kuryatkov, V ^{[1
]}

Temkin, H ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2128485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a significant improvement in the room temperature cathodoluminescence efficiency of AlGaN quantum wells when the three-dimensional growth mode is induced by reduced flux of ammonia. We interpret this observation in terms of formation of quantum dots of AlGaN in Al0.45Ga0.55N wells. Reflection high electron diffraction images and detailed measurements of the cathodoluminescence intensity, linewidth, and wavelength as a function of growth conditions are consistent with the presence of quantum dots. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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