Excitation power dependence of nonlinear optical response of excitons in GaAs/AlAs superlattices

被引:2
作者
Yamashita, Takae [1 ]
Kojima, Osamu [1 ]
Kita, Takashi [1 ]
Akahane, Kouichi [2 ]
机构
[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, 1-1 Rokkodai, Kobe, Hyogo 6578501, Japan
[2] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1 | 2011年 / 8卷 / 01期
关键词
nonlinear; optical response; exciton; biexciton; miniband; superlattice; QUANTUM-WELLS; PHOTON-ECHOES; GAAS;
D O I
10.1002/pssc.201000674
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We studied effects of the miniband structure to control the nonlinear optical response of excitons in GaAs/AlAs superlattices. The excitation-power dependence of the degenerate four-wave-mixing signal shows different saturation power in the samples with the thinner and thicker barriers, while the dependence of dephasing time is almost independent of the barrier width. The analysis of the excitation-power dependence of the photoluminescence spectrum indicates the biexciton generation at lower excitation power in the sample with the thicker barrier width. These results demonstrate that the saturation of the four-wave-mixing signal intensity of the exciton comes from the contribution of the biexcitons. Our results support a possibility that the nonlinear optical response of excitons can be controlled by controlling the barrier width. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:50 / 53
页数:4
相关论文
共 19 条
[1]   PHOTON ECHOES [J].
ABELLA, ID ;
KURNIT, NA ;
HARTMANN, SR .
PHYSICAL REVIEW, 1966, 141 (01) :391-&
[2]   SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].
BASTARD, G .
PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697
[3]   FEMTOSECOND PHOTON-ECHOES FROM BAND-TO-BAND TRANSITIONS IN GAAS [J].
BECKER, PC ;
FRAGNITO, HL ;
CRUZ, CHB ;
FORK, RL ;
CUNNINGHAM, JE ;
HENRY, JE ;
SHANK, CV .
PHYSICAL REVIEW LETTERS, 1988, 61 (14) :1647-1649
[4]   RABI FLOPPING IN SEMICONDUCTORS [J].
CUNDIFF, ST ;
KNORR, A ;
FELDMANN, J ;
KOCH, SW ;
GOBEL, EO ;
NICKEL, H .
PHYSICAL REVIEW LETTERS, 1994, 73 (08) :1178-1181
[5]   THERMODYNAMICS OF EXCITONIC MOLECULES IN SILICON [J].
GOURLEY, PL ;
WOLFE, JP .
PHYSICAL REVIEW B, 1979, 20 (08) :3319-3327
[6]   VERY LARGE OPTICAL NONLINEARITY OF SEMICONDUCTOR MICROCRYSTALLITES [J].
HANAMURA, E .
PHYSICAL REVIEW B, 1988, 37 (03) :1273-1279
[7]   COLLISION BROADENING OF TWO-DIMENSIONAL EXCITONS IN A GAAS SINGLE QUANTUM WELL [J].
HONOLD, A ;
SCHULTHEIS, L ;
KUHL, J ;
TU, CW .
PHYSICAL REVIEW B, 1989, 40 (09) :6442-6445
[8]   EXCITATION AND POLARIZATION EFFECTS IN SEMICONDUCTOR 4-WAVE-MIXING SPECTROSCOPY [J].
HU, YZ ;
BINDER, R ;
KOCH, SW ;
CUNDIFF, ST ;
WANG, H ;
STEEL, DG .
PHYSICAL REVIEW B, 1994, 49 (20) :14382-14386
[9]  
Hvam JM, 2004, INST PHYS CONF SER, P265
[10]   Evidence for quantum statistics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice [J].
Ichida, H ;
Nakayama, M .
PHYSICAL REVIEW B, 2001, 63 (19)