Fabrication of single-phase polycrystalline BaSi2 thin films on silicon substrates by vacuum evaporation for solar cell applications

被引：37

作者：

Nakagawa, Yoshihiko ^{[1
]}

Hara, Kosuke O. ^{[2
,3
]}

Suemasu, Takashi ^{[3
,4
]}

Usami, Noritaka ^{[1
,3
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Univ Yamanashi, Ctr Crystal Sci & Technol, Kofu, Yamanashi 4008511, Japan

[3] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol, Chiyoda Ku, Tokyo 1020076, Japan

[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 08期

基金：

日本科学技术振兴机构;

关键词：

MOLECULAR-BEAM EPITAXY; ION-IMPLANTATION; SI; SILICIDES; MECHANISM; SI(111);

D O I：

10.7567/JJAP.54.08KC03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the successful fabrication of single-phase polycrystalline BaSi2 films on Si(111) substrates by a simple vacuum evaporation method using BaSi2 granules. Substrate heating was found to be the key, and high substrate temperatures are required to realize single-phase BaSi2. The underlying mechanism is discussed considering the composition of vapor flux, and we confirmed that the vapor flux is Ba-rich at the initial stage of evaporation. The reevaporation of excess Ba atoms or their reaction with Si substrates would be responsible for the realization of stoichiometric single-phase BaSi2, which explains why high substrate temperatures are necessary. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

共 21 条

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