Development of RIE-textured silicon solar cells

A maskless plasma texturing technique using Reactive Ion Etching for silicon solar cells results in a very low reflectance of 5.4 % before, and 3.9 % after SiN deposition. A detailed study of surface recombination and emitter properties was made, then solar cells were fabricated using the DOSS solar cell process. Different plasma-damage removal treatments are tested to optimize low lifetime solar cell efficiencies. Highest efficiencies are observed for little or no plasma-damage removal etching on mo-Si. Increased J(sc) due to the RIE texture proved superior to a single layer anti-reflection coating. This indicates that RIE texturing is a promising texturing technique, especially applicable on lower lifetime (multicrystalline) silicon. The use of non-toxic, non-corrosive SF6 makes this process attractive for mass production.