Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers

被引：27

作者：

Kato, Masashi ^{[1
]}

Yoshida, Atsushi ^{[1
]}

Ichimura, Masaya ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

关键词：

PHOTOCONDUCTIVITY DECAY METHOD; ON-INSULATOR WAFERS; CRYSTALS; DEFECTS; LAYERS;

D O I：

10.1143/JJAP.51.02BP12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the fabrication of very high voltage SiC devices, it is essential to know the surface recombination velocity to accurately control the carrier lifetime. This study shows experimental results on the carrier lifetime in free-standing n-type 4H-SiC epilayers with several thicknesses and under two surface conditions to estimate the surface recombination velocity. The surface with chemical-mechanical polishing (CMP) was found to have lower surface recombination velocities than the as-grown epilayer surface. Similarly, the surface recombination velocity after CMP was low on the Si-face compared with that on the C-face. In addition, the surface recombination velocities on Si-and C-faces after CMP were quantitatively evaluated by comparison of experimental results with numerical calculations. (C) 2012 The Japan Society of Applied Physics

引用

页数：6

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