Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers

被引：27

作者：

Kato, Masashi ^{[1
]}

Yoshida, Atsushi ^{[1
]}

Ichimura, Masaya ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

关键词：

PHOTOCONDUCTIVITY DECAY METHOD; ON-INSULATOR WAFERS; CRYSTALS; DEFECTS; LAYERS;

D O I：

10.1143/JJAP.51.02BP12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the fabrication of very high voltage SiC devices, it is essential to know the surface recombination velocity to accurately control the carrier lifetime. This study shows experimental results on the carrier lifetime in free-standing n-type 4H-SiC epilayers with several thicknesses and under two surface conditions to estimate the surface recombination velocity. The surface with chemical-mechanical polishing (CMP) was found to have lower surface recombination velocities than the as-grown epilayer surface. Similarly, the surface recombination velocity after CMP was low on the Si-face compared with that on the C-face. In addition, the surface recombination velocities on Si-and C-faces after CMP were quantitatively evaluated by comparison of experimental results with numerical calculations. (C) 2012 The Japan Society of Applied Physics

引用

页数：6

共 50 条

[1] Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
Ichikawa, Shuhei
Kawahara, Koutarou
Suda, Jun
Kimoto, Tsunenobu
APPLIED PHYSICS EXPRESS, 2012, 5 (10)
[2] Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers
Kimoto, Tsunenobu
Hiyoshi, Toru
Hayashi, Toshihiko
Suda, Jun
JOURNAL OF APPLIED PHYSICS, 2010, 108 (08)
[3] Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
Klein, P. B.
Myers-Ward, R.
Lew, K. -K.
VanMil, B. L.
Eddy, C. R., Jr.
Gaskill, D. K.
Shrivastava, A.
Sudarshan, T. S.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 203 - +
[4] Long Carrier Lifetimes in n-type 4H-SiC Epilayers
Klein, P. B.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 279 - 284
[5] Decay curve analyses in carrier lifetime measurements of p- and n-type 4H-SiC epilayers
Hayashi, Toshihiko
Okuda, Takafumi
Suda, Jun
Kimoto, Tsunenobu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (11)
[6] Carrier lifetime measurement in n- 4H-SiC epilayers
Klein, P. B.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)
[7] Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing
Saito, Eiji
Suda, Jun
Kimoto, Tsunenobu
APPLIED PHYSICS EXPRESS, 2016, 9 (06)
[8] Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers
Díaz-Guerra, C
Piqueras, J
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 227 - 230
[9] Estimation of surface recombination velocities for n-type 4H-SiC surfaces treated by various processes
Mori, Yuto
Kato, Masashi
Ichimura, Masaya
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 432 - 435
[10] Analysis of carrier lifetimes in N plus B-doped n-type 4H-SiC epilayers
Yang, A.
Murata, K.
Miyazawa, T.
Tawara, T.
Tsuchida, H.
JOURNAL OF APPLIED PHYSICS, 2019, 126 (05)

← 1 2 3 4 5 →