Numerical simulation of guardring-free planar InP/InGaAs avalanche photodiode

被引：0
作者：
Malyshev, Sergei A. [1 ]
Chizh, Alexander L. [1 ]
Vasileuski, Yury G. [1 ]
机构：
[1] Natl Acad Sci Belarus, Inst Elect, Minsk, BELARUS
来源：
EUROCON 2007: THE INTERNATIONAL CONFERENCE ON COMPUTER AS A TOOL, VOLS 1-6 | 2007年
关键词：
semiconductor device modeling; avalanche photodiodes; avalanche breakdown;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Theoretical analysis of guardring-free planar InP/InGaAs avalanche photodiode with additional decoupling p-charge sheet based on 2-D drift-diffusion simulation is presented. Design of such avalanche photodiode and conditions under which edge breakdown does not occur are discussed.
引用
收藏
页码：658 / 661
页数：4
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