Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs

被引：18
|
作者：
Takaoka, K [1 ]
Ishikawa, M [1 ]
Hatakoshi, G [1 ]
机构：
[1] Toshiba Co Ltd, Adv Discrete Semicond Technol Lab, Ctr Corp Res & Dev, Kawasaki, Kanagawa 2128582, Japan
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2001年 / 7卷 / 02期
关键词：
InGaAlP; proton implantation; red vertical-cavity surface-emitting lasers; surface-emitting lasers; temperature characteristics; thermal resistance;
D O I：
10.1109/2944.954154
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAlP-based red vertical-cavity surface-emitting lasers (VCSELs) have been successfully fabricated using the proton-implanted planar structure suitable for mass production. A low threshold current of 2.5 mA with 666-nm lasing wavelength at room temperature and a high maximum continuous wave (CW) lasing temperature of 60 degreesC have been achieved. In addition, it was found that the maximum CW lasing temperature decreased linearly with the increase in the device diameter. This was because the thermal resistance of the device was approximately inversely proportional to the device diameter.
引用
收藏
页码：381 / 385
页数：5
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