Hydrogen in III-V nitrides

被引：0
作者：
Van de Walle, CG [1 ]
Johnson, NM [1 ]
机构：
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
来源：
GALLIUM NITRIDE (GAN) II | 1999年 / 57卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：157 / 184
页数：28
相关论文
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