P-InAsSbP/n-InAs single heterostructure back-side illuminated 8 x 8 photodiode array

被引：6

作者：

Brunkov, P. N. ^{[1
]}

Il'inskaya, N. D. ^{[1
]}

Karandashev, S. A. ^{[1
]}

Lavrov, A. A. ^{[2
]}

Matveev, B. A. ^{[1
]}

Remennyi, M. A. ^{[1
]}

Stus, N. M. ^{[1
]}

Usikova, A. A. ^{[1
]}

机构：

[1] Ioffe Inst, 26 Politekhnicheskaya, St Petersburg 194021, Russia

[2] IoffeLED Ltd, 26 Politekhnicheskaya, St Petersburg 194021, Russia

来源：

INFRARED PHYSICS & TECHNOLOGY | 2016年 / 78卷

关键词：

HOT mid-IR detectors; InAs photodiodes; Infrared sensors; Dark current; Backside illuminated photodiodes; Pyrometry; IR gas sensors; MU-M;

D O I：

10.1016/j.infrared.2016.08.013

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

P-InAsSbP/n-InAs/n(+)-InAs single heterostructure photodiode monolithic array with linear impurity distribution in the space charge region and "bulk" n-InAs absorbing layer has been fabricated by the LPE method and studied for the first time. Unlike all known InAsSbP/InAs PDs with an abrupt p-n junction the linear impurity distribution PDs potentially suggest lower compared with analogs capacitance and tunneling current. Indeed the developed photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8 x 10(-6) A/cm(2), U-bias =-0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 190 K (2 pi field of view, D*(3.1) (mu m) = 1.1 x 10(12) cm Hz(1/2)/W) have been demonstrated. High photodiode performance is thought to be due to above peculiarities of the impurity distribution as well as low defect density in P-InAsSbP/n-InAs/n(+)-InAs single heterostructure. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：249 / 253

页数：5

共 12 条

[1] Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature [J].

Abell, J. ;

Kim, C. S. ;

Bewley, W. W. ;

Merritt, C. D. ;

Canedy, C. L. ;

Vurgaftman, I. ;

Meyer, J. R. ;

Kim, M. .

APPLIED PHYSICS LETTERS, 2014, 104 (26)

[2] Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application [J].

Ahmetoglu , M. ;

Kucur, B. ;

Andreev, I. A. ;

Kunitsyna, E. V. ;

Mikhailova, M. P. ;

Yakovlev, Yu. P. .

INFRARED PHYSICS & TECHNOLOGY, 2010, 53 (05) :399-403

[3] Threshold sensitivity of the mid-IR sensors [J].

Aleksandrov, S. E. ;

Gavrilov, G. A. ;

Kapralov, A. A. ;

Sotnikova, G. Yu. .

4TH INTERNATIONAL CONFERENCE OF PHOTONICS AND INFORMATION OPTICS, PHIO 2015, 2015, 73 :177-182

[4] Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes [J].

Brunkov, P. N. ;

Il'inskaya, N. D. ;

Karandashev, S. A. ;

Karpukhina, N. G. ;

Lavrov, A. A. ;

Matveev, B. A. ;

Remennyi, M. A. ;

Stus, N. M. ;

Usikova, A. A. .

INFRARED PHYSICS & TECHNOLOGY, 2016, 76 :542-545

[5] P-InAsSbP/n0-InAs/n+-InAs Photodiodes for Operation at Moderate Cooling (150-220 K) [J].

Brunkov, P. N. ;

Il'inskaya, N. D. ;

Karandashev, S. A. ;

Latnikova, N. M. ;

Lavrov, A. A. ;

Matveev, B. A. ;

Petrov, A. S. ;

Remennyi, M. A. ;

Sevostyanov, E. N. ;

Stus, N. M. .

SEMICONDUCTORS, 2014, 48 (10) :1359-1362

[6] Low Bandgap InAs-Based Thermophotovoltaic Cells for Heat-Electricity Conversion [J].

Krier, A. ;

Yin, M. ;

Marshall, A. R. J. ;

Krier, S. E. .

JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (06) :2826-2830

[7] The influence of melt purification and structure defects on mid-infrared light emitting diodes [J].

Krier, A ;

Sherstnev, VV .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (13) :1484-1488

[8] Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H [J].

Marshall, Andrew R. J. ;

Tan, Chee Hing ;

David, John P. R. ;

Ng, Jo Shien ;

Hopkinson, Mark .

OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, 2007, 6740 :H7400-H7400

[9] Hysteresis. phenomena. in reverse biased InAsSbP/InAs heterostructure [J].

Rathgeb, Stephane ;

Moeglin, Jean-Pierre ;

Boffy, Alain ;

Pasquinelli, Marcel ;

Palais, Olivier .

APPLIED PHYSICS LETTERS, 2006, 89 (02)

[10] Linear array of InAs APDs operating at 2 μm [J].

Sandall, Ian C. ;

Zhang, Shiyong ;

Tan, Chee Hing .

OPTICS EXPRESS, 2013, 21 (22) :25780-25787

← 1 2 →