Growth of highly resistive BiMnO3 films -: art. no. 101906

被引：75
作者：
Eerenstein, W [1 ]
Morrison, FD
Scott, JF
Mathur, ND
机构：
[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England
[2] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2039988
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
BiMnO3 (010) films (100 nm) were grown epitaxially on SrTiO3 (001) and 0.2 at. % Nb-doped SrTiO3 (001) substrates using pulsed laser deposition. The microstructure, electrical, and magnetic properties, and indeed the formation of the correct phase, were found to be very sensitive to growth parameters. This optimization has resulted in highly resistive BiMnO3 films and thus enabled room-temperature dielectric measurements: We obtained a resistivity of 5x10(7) Omega cm, and an effective (i.e. thickness dependent) dielectric constant of 1400. These findings pave the way for magnetoelectric measurements and further optimization. (c) 2005 American Institute of Physics.
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