In2S3 Buffer Layers for Cu(InGa)Se2 Solar Cells Fabricated by a Nanoparticle-Coating Approach

被引：3

作者：

Zhang, Yiwen ^{[1
,2
]}

Ito, Manabu ^{[2
]}

Tamura, Tomoaki ^{[1
]}

Yamada, Akira ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Toppan Printing Co Ltd, Tech Res Inst, Sugito, Saitama 3458508, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 05期

关键词：

INDIUM SULFIDE; CU(IN; GA)SE-2;

D O I：

10.1143/APEX.4.052301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nanoparticle-coating approach is applied to prepare In2S3 buffer layers in Cu(InGa)Se-2 solar cells for the first time. In this research, the electric and optical characteristics of the In2S3 films at different annealing temperatures are investigated. It is found that 275 degrees C is the optimum annealing temperature in our case and the highest efficiency of 10.0% solar cell is achieved at this temperature. The highest efficiency solar cell with the In2S3 buffer layer exhibits a higher light absorption in the region of 350-500 nm than the reference cell with a CdS layer. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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