A NUMERICAL ANALYSIS ON THE THERMAL EFFECT IN GaN BASED GUNN DIODE

被引：0
|
作者：
Huang, Yang-Hong [1 ]
Wang, Ying [1 ]
Yang, Lin-An [1 ]
Zhai, Hui-Fang [1 ]
Wang, Zhi-Zhe [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a numerical analysis on the electric and thermal behaviors of GaN n(+)n(-)nn(+) Gunn oscillations based on Energy Balance (EB) model and Non-isothermal Energy Balance (NEB) models. We can achieve the influence of lattice heating on the Gunn oscillations based on NEB model, as it is based on the coupling of an energy-balance model with a thermal model for the description of the lattice temperature everywhere in the device, which makes it possible to optimize the device.
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页数：3
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