Correlation effects in low dimensional electron systems: the electron-hole bilayer

被引:13
|
作者
Senatore, G
De Palo, S
机构
[1] Univ Trieste, Dipartimento Fis Teor, I-34014 Trieste, Italy
[2] INFM DEMOCRITOS Natl Simulat Ctr, Trieste, Italy
[3] INFM, Unita Roma La Sapienza 1, I-00185 Rome, Italy
关键词
electronic correlation; electron-hole; bilayer; Bose condensation; BCS; diffusion; Monte Carlo;
D O I
10.1002/ctpp.200310047
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
We review recent progress in the area of low-dimensional electrons, which has been made possible mainly by the use of quantum simulations. We focus on DMC results for a symmetric electron-hole bilayer, which we analyze in some detail. We also contrast the results of simulations with (i) the predictions of a mean field treatments and (ii) the results of approaches based on the dielectric formalism, such as the STLS and qSTLS schemes.
引用
收藏
页码:363 / 368
页数:6
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