Electromigration Mechanisms in Cu Nano-Wires

被引:11
作者
Lin, M. H. [1 ]
Lee, S. C. [1 ]
Oates, A. S. [1 ]
机构
[1] Taiwan Semicond Mfg Co Ltd, Hsinchu 30077, Taiwan
来源
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年
关键词
FAILURE DISTRIBUTIONS; INTERCONNECTS; LINES; TEMPERATURE; DIFFUSION; MODEL; DRIFT;
D O I
10.1109/IRPS.2010.5488747
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, we propose a new drift velocity technique to measure electromigration at temperatures of 125 degrees C to directly assess electromigration transport at use conditions. We present measurements of the temperature of the drift velocity of Cu conductors with small and large polycrystalline grain size. A significant grain size dependence of drift velocity was found, indicating a large flux of atoms through grain boundaries when the fraction of polycrystalline segments is a significant fraction of the conductor length. A physical model is proposed to explain the drift velocity behavior in Cu nano-wires and we determine the diffusion parameters from grain boundary diffusion and interface diffusion.
引用
收藏
页码:705 / 711
页数:7
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