A Unified PUF and TRNG Design Based on 40-nm RRAM With High Entropy and Robustness for IoT Security

被引：33
作者：
Gao, Bin [1 ,2 ]
Lin, Bohan [1 ]
Li, Xueqi [1 ]
Tang, Jianshi [1 ,2 ]
Qian, He [1 ,2 ]
Wu, Huaqiang [1 ,2 ]
机构：
[1] Tsinghua Univ, Beijing Innovat Ctr Future Chips ICFC, Sch Integrated Circuits, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 02期
关键词：
Resistance; Entropy; Robustness; Security; Semiconductor device measurement; Autocorrelation; Bit error rate; Physically unclonable function (PUF); resistive random access memory (RRAM); true random number generator (TRNG); PHYSICALLY UNCLONABLE FUNCTION; MEMORY;
D O I：
10.1109/TED.2021.3138365
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Physically unclonable function (PUF) and true random number generator (TRNG) are the indispensable primitives for the Internet-of-Things (IoT) security. In this article, a highly robust unified PUF/TRNG design is demonstrated. An entropy source (ES) chip based on 40-nm resistive random access memory (RRAM) is designed and fabricated, and a pseudo-forming technique is developed to ensure excellent robustness. The unified PUF/TRNG is tested across -55 degrees C to 125 degrees C with different supply voltages, achieving <0.001% bit error rate (BER) and >0.999 worst case min-entropy simultaneously. Excellent randomness is verified by NIST SP800-22 and 90B tests. This highly robust unified design can implement an authentication system with the authentication error rate (AER) approaching 0% and thus is promising for future IoT security applications.
引用
收藏
页码：536 / 542
页数：7
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