1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions

被引：17

作者：

Roy, Tania ^{[1
]}

Puzyrev, Yevgeniy S. ^{[2
]}

Zhang, En Xia ^{[1
]}

DasGupta, Sandeepan ^{[1
]}

Francis, Sarah A. ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Mishra, Umesh K. ^{[3
]}

Speck, James S. ^{[4
]}

Pantelides, Sokrates T. ^{[1
,2
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 02期

关键词：

LOW-FREQUENCY NOISE; POWER PERFORMANCE; MOS; IRRADIATION; DEFECTS;

D O I：

10.1016/j.microrel.2010.09.022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The magnitude of the low-frequency 1/f noise in GaN/AlGaN HEMTs grown under Ga-rich. N-rich, and NH3-rich conditions varies in response to hot-electron stress. Density-functional-theory (DFT) calculations show that the Ga vacancies that are responsible for the positive shift in pinch-off voltage due to electrical stress in Ga-rich and N-rich devices do not contribute significantly to the observed changes in 1/f noise with electrical stress. The N anti-sites that cause negative shifts in pinch-off voltage in ammonia-rich devices can cause an increase in the noise magnitude after stress. DFT calculations also show that singly hydrogenated and dehydrogenated Ga-N divacancies also can contribute to the noise before and after stress, respectively. A decrease in noise magnitude is also observed in some devices after stress. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：212 / 216

页数：5

共 19 条

[1] Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors [J].

Balandin, A .

ELECTRONICS LETTERS, 2000, 36 (10) :912-913

[2] Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors [J].

Corrion, A. L. ;

Poblenz, C. ;

Wu, F. ;

Speck, J. S. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)

[3] ESTIMATING OXIDE-TRAP, INTERFACE-TRAP, AND BORDER-TRAP CHARGE-DENSITIES IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

FLEETWOOD, DM ;

SHANEYFELT, MR ;

SCHWANK, JR .

APPLIED PHYSICS LETTERS, 1994, 64 (15) :1965-1967

[4] Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the 1/f Noise of nMOS and pMOS Transistors [J].

Francis, Sarah A. ;

Dasgupta, Aritra ;

Fleetwood, Daniel M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (02) :503-510

[5] EXPERIMENTAL STUDIES ON 1-F NOISE [J].

HOOGE, FN ;

KLEINPENNING, TGM ;

VANDAMME, LKJ .

REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532

[6] Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs [J].

Kalavagunta, Aditya ;

Silvestri, M. ;

Beck, M. J. ;

Dixit, S. K. ;

Schrimpf, Ronald D. ;

Reed, R. A. ;

Fleetwood, D. M. ;

Shen, L. ;

Mishra, U. K. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) :3192-3195

[7] 1/F NOISE IN N-CHANNEL AND P-CHANNEL MOS DEVICES THROUGH IRRADIATION AND ANNEALING [J].

MEISENHEIMER, TL ;

FLEETWOOD, DM ;

SHANEYFELT, MR ;

RIEWE, LC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) :1297-1303

[8] X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE [J].

Pei, Y. ;

Poblenz, C. ;

Corrion, A. L. ;

Chu, R. ;

Shen, L. ;

Speck, J. S. ;

Mishra, U. K. .

ELECTRONICS LETTERS, 2008, 44 (09) :598-+

[9] 1/F NOISE IN MODFETS AT LOW DRAIN BIAS [J].

PERANSIN, JM ;

VIGNAUD, P ;

RIGAUD, D ;

VANDAMME, LKJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (10) :2250-2253

[10] Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors [J].

Puzyrev, Y. S. ;

Tuttle, B. R. ;

Schrimpf, R. D. ;

Fleetwood, D. M. ;

Pantelides, S. T. .

APPLIED PHYSICS LETTERS, 2010, 96 (05)

← 1 2 →