Strain relaxation in epitaxial GaAs/Si (001) nanostructures

被引：7

作者：

Kozak, Roksolana ^{[1
]}

Prieto, Ivan ^{[1
,2
]}

Dasilva, Yadira Arroyo Rojas ^{[1
]}

Erni, Rolf ^{[1
]}

Skibitzki, Oliver ^{[3
]}

Capellini, Giovanni ^{[3
,4
]}

Schroeder, Thomas ^{[3
,5
]}

von Kanel, Hans ^{[1
,2
]}

Rossell, Marta D. ^{[1
]}

机构：

[1] Empa Swiss Fed Labs Mat Sci & Technol, Electron Microscopy Ctr, Dubendorf, Switzerland

[2] ETH, Lab Solid State Phys, Zurich, Switzerland

[3] IHP, Dept Mat Res, Frankfurt, Oder, Germany

[4] Univ Roma Tre, Dipartimento Sci, Rome, Italy

[5] Brandenburg Tech Univ Cottbus, Inst Phys, Cottbus, Germany

来源：

PHILOSOPHICAL MAGAZINE | 2017年 / 97卷 / 31期

基金：

瑞士国家科学基金会;

关键词：

Dislocations; stacking faults; twins; strain relaxation; HADF-STEM; GaAs; Si nanostructures; ELECTRON-MICROSCOPY; DISLOCATIONS; SEMICONDUCTORS; SI(001); SILICON; CDTE; HETEROSTRUCTURES; DEFECTS; METALS; MISFIT;

D O I：

10.1080/14786435.2017.1355117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystal defects, present in similar to 100 nm GaAs nanocrystals grown by metal organic vapour phase epitaxy on top of (0 0 1)-oriented Si nanotips (with a tip opening 50-90 nm), have been studied by means of high-resolution aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. The role of 60 degrees perfect, 30 degrees and 90 degrees Shockley partial misfit dislocations (MDs) in the plastic strain relaxation of GaAs on Si is discussed. Formation conditions of stair-rod dislocations and coherent twin boundaries in the GaAs nanocrystals are explained. Also, although stacking faults are commonly observed, we show here that synthesis of GaAs nanocrystals with a minimum number of these defects is possible. On the other hand, from the number of MDs, we have to conclude that the GaAs nanoparticles are fully relaxed plastically, such that for the present tip sizes no substrate compliance can be observed.

引用

页码：2845 / 2857

页数：13

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